Semiconductor device and method for manufacturing the same

ABSTRACT

The semiconductor device according to this invention is chacterized by a package structure of a semiconductor substrate  100  equipped with a photoelectric converting portion, wherein a light-shading means  104  is arranged in an area corresponding to at least the photoelectric converting portion on the side of the rear surface of the semiconductor substrate.

BACKGROUND OF THE INVENTION

This application is a Divisional of co-pending application Ser. No.10/620,461, filed on Jul. 17, 2003, the entire contents of which arehereby incorporated by reference and for which priority is claimed under35 U.S.C. § 120.

1. Field of the Invention

This invention relates to a semiconductor device and a method formanufacturing the same, and more particularly to a semiconductor devicehaving a photoelectric converting portion such as a solid-state imagepick-up device.

2. Description of the Related Art

The solid-state image pick-up device inclusive of a CCD (charge coupleddevice) has been increasingly required to decrease its size in view ofthe necessity of its application to a portable telephone and digitalcamera.

As a typical example of the application, a solid-state image pick-updevice has been proposed which is provided with a micro-lens in thelight receiving area of a semiconductor chip. Specifically, it isproposed to downsize the solid-state image pick-up device provided witha micro-lens in the light receiving area by integrally packaging ahermetic-sealing portion between the light receiving area and micro-lensof the solid-state image pick-up device (JP-A-7-202152).

Such an arrangement can reduce the packaging area, and opticalcomponents such as a filter, lens, prism, etc. can be bonded onto thesurface of the hermetic sealing portion. Thus, down-sizing of thepackage can be accomplished without deteriorating the light-gatheringcapability of the micro-lens.

However, such an arrangement also presents various problems.

In mounting the solid-state image pick-up device, in order to take out asignal externally, the solid-state image pick-up device mounted on asupporting substrate is subjected to electric connection and sealing bye.g. bonding.

In order to satisfy the demand for improvement of resolution, variousperipheral circuits are required. Where substrates for the peripheralcircuits are stacked, a problem of noise due to signal transfer from theperipheral circuits to the solid-state image pick-up device or from thesolid-state image pick-up device to the peripheral circuits has becomeobvious. Therefore, reduction in the wiring length is an importantproblem to be solved.

In order to enhance the driving speed, in recent years, thesemiconductor chip has been low-profiled to about 200 μm.Correspondingly, the problem of reduction in the strength of thesemiconductor chip or mixing of an erroneous signal in the output signalfrom the solid-state image pick-up device, which is attributable to thepenetration of a circuit pattern such as a bump on the rear surface ofthe semiconductor chip through the semiconductor chip, has becomeserious.

This problem also occurs in other various photoelectric conversiondevices such as a photo-sensor having a pin structure. This problem is avery serious problem in recent years when the low-profiling of thesemiconductor chip has been advanced explosively.

SUMMARY OF THE INVENTION

In view of such a circumstance, this invention has been accomplished forthe objects to provide a semiconductor device with a compact size, highdriving speed and high reliability.

This invention is also intended to provide a semiconductor device whichcan be easily manufactured and has high reliability.

The semiconductor device according to this invention has a semiconductorsubstrate equipped with a photoelectric converting portion, and ischaracterized by a package structure, wherein a light-shading means isarranged in an area corresponding to at least the photoelectricconverting portion on the side of the rear surface of the semiconductorsubstrate.

In accordance with such a configuration, since the light shading meansis formed on the rear surface of the semiconductor substrate, even whenthe semiconductor substrate is thin, the light reflected from the rearsurface is prevented from being incident on the photoelectric convertingportion, thereby providing a semiconductor device which generates lessmalfunction and is reliable.

Preferably, the package structure may be a wiring board with aconnecting terminal formed on the rear surface.

In the case of the wiring board with a connecting terminal formed on therear surface, the image of the connecting terminal such as a bump isprevented from permeating a thin semiconductor substrate to be incidenton the photoelectric converting portion thereby to cause malfunction.

Preferably, the light shading means may be formed by making rough thearea corresponding to the photoelectric converting portion on the rearsurface of the semiconductor substrate. In accordance with thisconfiguration, light diffusion can be produced on the rear surface ofthe semiconductor substrate, thereby preventing light from reaching thephotoelectric converting portion.

Preferably, the light shading means may be a multi-layer film composedof films with different refraction indices formed on the areacorresponding to the photoelectric converting portion on the rearsurface of the semiconductor substrate. In accordance with thisconfiguration, a reflective film can be easily formed, therebypreventing light from reaching the photoelectric converting portion.

Preferably, the light shading means may be a light-shading film formedon the rear surface of the semiconductor substrate, thereby preventinglight from reaching the photoelectric converting portion.

Preferably, the wiring board may be connected to the semiconductorsubstrate through a light-shading resin material, thereby easilypreventing light from reaching the photoelectric converting portion.

Preferably, the wiring board may be made rough in the surface, therebypreventing light from reaching the photoelectric converting portion.

Further, the wiring board may include a light shading layer in theinterior or on the rear surface, thereby preventing light from reachingthe photoelectric converting portion.

The method for manufacturing a semiconductor device according to thisinvention comprises the steps of: forming a plurality of semiconductordevices on the front surface of a semiconductor substrate; bonding awiring board on the rear surface of the semiconductor substrate; andseparating a bonding structure obtained by bonding into semiconductordevices, and is characterized by comprising the step of grinding therear surface of the semiconductor substrate.

In accordance with such a method, the rear surface of the semiconductorsubstrate has only to be made rough to produce light diffusion on therear surface of the semiconductor substrate, thereby providing asemiconductor device with high reliability.

The method for manufacturing a semiconductor device is characterized bycomprising the steps of: forming a plurality of semiconductor devices onthe front surface of a semiconductor substrate; bonding a wiring boardon the rear surface of the semiconductor substrate through light-shadingadhesive; and separating a bonding structure obtained by bonding intosemiconductor devices.

In accordance with such a configuration, the light shading resin hasonly to be employed as adhesive for bonding in the CSP step.

Further, a structure may be adopted in which a peripheral circuit isstacked on a supporting member and electric connection is made betweenthe solid-state image pick-up device board and a peripheral circuitboard through a through-hole made in the solid-state image pick-updevice board and a supporting member. Such a structure permits theentire device to be miniaturized and the distance between thesolid-state image pick-up device and the peripheral circuit board to beshortened. Therefore, the wiring resistance is reduced so that thedriving speed can be increased. Further, by using the supporting membermade of a light-shading material, the light reflected from the rearsurface of the solid-state image pick-up device can be suppressed moresurely.

Further, by also making unevenness such as by grinding the rear surfaceof the solid-state image pick-up device, it is possible to suppress theinfluence of the light reflected from the rear surface on the outputfrom the solid-state image pick-up device. Furthermore, thelight-shading film such as a tungsten film formed on the rear surface ofthe solid-state image pick-up device through an oxide film may be as thesupporting member.

Further, the multi-layer film may be formed on the rear surface of thesolid-state image pick-up device. This suppress the influence of thelight reflected from the rear surface on the output from the solid-stateimage pick-up device.

In addition, the light-shading resin such epoxy resin may be applied tothe rear surface of the solid-state image pick-up device.

Furthermore, unevenness may be formed on the surface of the supportingmember (reinforcement member). The light-shading material such as epoxyresin may be employed as the adhesive for connection to the peripheralcircuit board.

Preferably, the supporting member includes a reinforcement plate.

Further, if the supporting member includes a heat insulating material,it is possible to prevent the peripheral circuit board frommalfunctioning owing to the heat generation of the solid-state imagepick-up device board, or otherwise the solid-state image pick-up deviceboard from malfunctioning owing to the heat generation of the peripheralcircuit board. Preferably, if the supporting member includes a shieldingplate, unnecessary radiation noise can be suppressed.

Preferably, if the semiconductor substrate is bonded to the peripheralcircuit board through a magnetic shield plate, it is possible to preventthe semiconductor substrate from suffering the noise due to unnecessaryradiation from the peripheral circuit board, and the peripheral circuitboard from suffering the noise due to the unnecessary radiation from thesolid-state image pick-up device board.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a solid-state image pick-up deviceaccording to the first embodiment of this invention.

FIG. 2 is a sectional view of a solid-state image pick-up deviceaccording to the second embodiment of this invention.

FIG. 3 is a sectional view of a solid-state image pick-up deviceaccording to the third embodiment of this invention.

FIG. 4 is a sectional view of a solid-state image pick-up deviceaccording to the fourth embodiment of this invention.

FIG. 5 is a sectional view of a solid-state image pick-up deviceaccording to the fifth embodiment of this invention.

FIG. 6 is a sectional view of a solid-state image pick-up deviceaccording to the sixth embodiment of this invention.

FIGS. 7(a) and 7(b) are a sectional view of a main-part enlargedsectional view of a solid-state image pick-up device according to theseventh embodiment of this invention.

FIGS. 8(a) to 8(d) are views showing the steps for manufacturing thesolid-state image pick-up device according to the seventh embodiment ofthis invention.

FIGS. 9(a) to 8(c) are views showing the steps for manufacturing thesolid-state image pick-up device according to the seventh embodiment ofthis invention.

FIGS. 10(a) to 8(d) are views showing the steps for manufacturing thesolid-state image pick-up device according to the seventh embodiment ofthis invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Now referring to the drawings, an explanation will be given of variousembodiments of this invention.

Embodiment 1

This solid-state image pick-up device, as shown in a sectional view ofFIG. 1, is designed so that a glass substrate 201 which serves as atranslucent member is bonded on the surface of a solid-state imagepick-up device board 100, which is a silicon substrate 101 with asolid-state image pick-up device 102 formed thereon, through a space203S to provide a gap C corresponding to a light receiving area whichconstitutes a photo-diode in the silicon substrate 101; the rear surfaceof the silicon substrate 101 is made rough to form an uneven area 104which is connected to a peripheral circuit board 901 formed on the rearsurface of the solid-state image pick-up device board 100; and bumps 903serving as external extending terminals are formed on a wiring layer 902formed on the peripheral circuit board 901. In this structure, thesolid-state image pick-up device has a thickness of about 130 μm and theperipheral circuit board 901 has a thickness of about 200 μm.

The spacer 203 s has a height of 30-500 μm, preferably 80-120 μm.

In this structure, the unevenness is formed on the rear surface of thesolid-state image pick-up device board. For this reason, light isdiffused to prevent the light from reaching the photoelectric convertingportion.

Embodiment 2

This solid-state image pick-up device as shown in a sectional view ofFIG. 2, is designed so that a multi-layer 105 composed of thin filmshaving different refractive indices is formed in an area correspondingto a photodiode portion on the rear surface of a solid-state imagepick-up device board 100, which composed of a silicon substrate 101 anda solid-state image pick-up device 102 formed thereon. The remainingportion is formed in the same manner as in the first embodiment.

In this structure, a reflective film can be easily formed, therebypreventing images of the bumps on the rear surface from reaching thephotodiode portion.

Embodiment 3

In place of the multi-layer 105, as shown in FIG. 3, a light-shadingfilm 106 of a tungsten film is formed on the rear surface of thesolid-state image pick-up device board 100, thereby preventing images ofthe bumps on the rear surface from reaching the photodiode portion. Theremaining portion is formed in the same manner as in the firstembodiment.

Embodiment 4

In this embodiment, the solid-state image pick-up device board has nofilm formed thereon, and its rear surface is not made rough. In place ofthis, an adhesive resin layer formed on the peripheral circuit board 901to be connected to the rear surface of the solid-state image pick-updevice board 100 is made of epoxy resin 210. The remaining portion isformed in the same manner as in the first embodiment.

Such a structure prevents images of the bumps on the rear surface fromreaching the photodiode portion.

In addition to the configuration of each of the first to thirdembodiments, the adhesive resin layer may be made of light-shadingresin.

Embodiment 5

In this embodiment, the solid-state image pick-up device board has nofilm formed thereon, and its rear surface is not made rough. In place ofthis, as shown in FIG. 5, the surface of the peripheral circuit board901 to be connected to the rear surface of the solid-state image pick-updevice board 100 is made rough. Such a structure also prevents lightfrom reaching the photodiode portion. The remaining portion is formed inthe same manner as in the first embodiment.

Such a structure can prevent images of the bumps on the rear surfacefrom reaching the photodiode portion.

This embodiment may be also added to the first to forth embodiments.

Embodiment 6

In this embodiment, the solid-state image pick-up device board has nofilm formed thereon, and its rear surface is not made rough. In place ofthis, as shown in FIG. 6, a light-shading film 910 is formed within theperipheral circuit board 901 to be connected to the rear surface of thesolid-state image pick-up device board 100. Such a structure alsoprevents light from reaching the photodiode portion. The remainingportion is formed in the same manner as in the first embodiment.

Such a structure can prevent images of the bumps on the rear surfacefrom reaching the photodiode portion.

Preferably, the light-shading film may be formed on the rear surface ofthe peripheral circuit board 901.

Embodiment 7

As shown in a sectional view of FIG. 7(a) and a main-part enlargedsectional view of FIG. 7(b), this solid-state image pick-up device isdesigned so that a glass substrate 201 which serves as a translucentmember is bonded on the surface of a solid-state device board 100, whichis a silicon substrate 101 with a solid-state image pick-up device 102formed thereon, through a space 203S to provide a gap C corresponding toa photo-diode area (light receiving area) in the silicon substrate 101;the electrode of the solid-state image pick-up device is extended outthrough a through-hole H formed on the silicon substrate 101 to the rearsurface of the solid-state image pick-up board 100; a reinforcementplate 701 which is a supporting member made of light-shading material isformed on the rear surface of the solid-state image pick-up device board100; and pads 113 and bumps 114 which serve as external extendingterminals are formed on the reinforcement plate 701. The peripheralcircuit board 901 is connected to the rear side of the reinforcementplate 701 through an anisotropic conductive film 115. Its peripheraledges are individually separated by dicing and the external connectionsfor the individual segments are made through bonding pads 118. Thespacer 203S has a height of 30-500 μm, preferably 80-120 μm. Inaccordance with this embodiment, since the reinforcement plate 701incorporates a light-shading plate, the light-shading capability can beimproved without using any separating component.

The solid-state image pick-up device board 100, as seen from a main partenlarged-sectional view of FIG. 7(b), is a silicon substrate 101 on thesurface of which solid-state image pick-up devices are arranged and acolor filter 46 and micro-lenses 50 are formed. Incidentally, althoughthe through-holes H is not seen in this section, it is formed to beconnected to a charge transfer electrode 32.

The solid-state image pick-up device board 100 is so designed that achannel stopper 28 is formed in a p type well 101 b formed on thesurface of an n-type silicon substrate 101 a, and a photodiode 14 andthe charge transfer device 33 are formed so as to sandwich the channelstopper 28 therebetween. In this embodiment, an n type impurity regions14 b are formed within p+ channel regions 14 a to provide photodiodes14. Further, vertical charge transfer channels 20, each of which is an ntype impurity region having a depth of about 0.3 μm, are formed withinthe p+ channel regions 14 a, and vertical charge transfer electrodes 32each made from a polysilicon layer are formed on the vertical chargetransfer channels 20 through a gate insulating film 30 made from asilicon oxide film, thereby providing charge transfer devices 33. Aread-out gate channel 26 made from a p type impurity region is formedbetween the charge transfer device 33 and the photodiode 14 on the sideof reading a signal charge to the vertical charge transfer channel 20.The through-hole H (not shown in FIG. 7) is formed to be connected tothe vertical charge transfer electrode 32.

The n type impurity region 14 a is exposed along the read gate channel26 on the surface of the silicon substrate 101. Therefore, the signalcharge generated in the photodiode 14, after having been temporarilystored in the n type impurity region 14 a, is read out through the readchannel gate 26.

On the other hand, the channel stopper 28 made of a p+ type impurityregion resides between the vertical charge transfer channel 20 and theother photodiode 14. Thereby, the photodiode 14 and the vertical chargetransfer channel 20 are electrically separated from each other, and thevertical charge transfer channels 20 are separated from each other so asnot to be in contact with each other.

Further, the vertical charge transfer electrode 32 covers the read gatechannel 26 and is so formed that the n type impurity region is exposedand the channel stopper 28 is partially exposed. A signal charge istransferred from the read gate channel 26 below the portion of thevertical charge transfer electrode 32 to which a read signal is applied.

The vertical charge transfer electrode 32 as well as the vertical chargetransfer channel 20 constitutes a vertical charge transfer device (VCCD)33 which vertically transfers the signal charge generated in the pnjunction of the photo-diode 14. The surface of the substrate on whichthe vertical charge transfer electrode 32 is formed is covered with asurface protection film 36. On the surface protection film 36, alight-shading film of tungsten is formed. Only a light receiving region40 of the photodiode is opened and the remaining region is shaded fromlight.

The vertical charge transfer electrode 32 is overlaid with a flatteninginsulating film 43 for surface flattening and a translucent resin film44 thereon. The translucent resin film 44 is overlaid with a filterlayer 46. The filter layer 46 is composed of a red filter layer 46R, agreen filter layer 46G and a blue filter layer 46B which aresuccessively arranged correspondingly to the respective photodiodes 14to provide a prescribed pattern.

The filter layer 46 is overlaid with translucent resin containingphotosensitive resin of a refractive index of 1.3-2.0 through aflattening insulating layer 48. The translucent resin is patterned byphotolithography and thereafter molten to be rounded by surface tension.The molten translucent resin is cooled to form a micro-lens arrayconsisting of micro-lenses 50. Thus, the filter layer 46 is overlaidwith the micro-lens array through the insulating film 48.

An explanation will be given of a process for manufacturing thesolid-state image pick-up device. This process, as seen from flowchartsof FIGS. 8(a) to 8(d) and FIGS. 9(a) to 9(d), is based on the CSP (chipsize packaging) technique in which a wafer is subjected to positioningand unified with the reinforcement plate and glass substrate bycollective packaging and separated into individual solid-state devices.This technique is characterized in that the solid-state image pick-updevice board and glass substrate are designed to have their alignededges and electrodes are extended out from the solid-state image pick-updevice board 100 through the through-holed which penetrate through thereinforcement plate 701 pasted on the rear surface thereof. Further, asealing cover glass 200 equipped a spacer 203S previously formed isemployed.

First, an explanation will be given of the process of forming aspacer-equipped glass substrate.

As seen from FIG. 8(a), a silicon substrate 203 which constitutes aspacer is put on the surface of a glass substrate 201 through anadhesive layer 203 which is made of an UV hardening adhesive (e.g.cation polymerizing energy adhesive). The portions of the siliconsubstrate which constitute spacers are covered with resist patterns R1.Incidentally, the adhesive layer may be other thermosetting adhesives.

As seen from FIG. 8(b), with the resist patterns left on the portionswhich constitute the spacers, the silicon substrate 203 is etched byphotolithography, thereby forming the spacers 203S.

Thereafter, with the resist patterns R1 for forming the spacers S beingleft, the regions between the spacers except an inter-device region arefilled with resist R. The glass substrate is etched to a prescribeddepth to form an inter-device groove 204 as shown in FIG. 8(d). Adhesivelayers 207 are formed on the surface of the spacers. In this embodiment,because the spacers 203 are made from the silicon substrate, as long asetching is performed under the condition that the etching speed ofsilicon oxide which is a main component of the glass substrate is muchhigher than that of the silicon, the etching may be performed with theside wall of the spacer being exposed to the inter-device region. Theinter-device groove 204 may be formed using a dicing blade (grindstone).

By performing photolithography again, a resist pattern including theentire side wall of the spacer is formed and by performing the etchingthrough the resist pattern, the groove 204 can be formed. In this way,the sealing cover glass 200 with the groove 204 and spacers 203 thusformed is manufactured.

Next, the solid-state image pick-up device board is formed. First, asseen from FIG. 9(a), a silicon substrate 101 (6 inch wafer is adopted inthis embodiment) is prepared. On the surface of the silicon substrate101, in regions corresponding to scribing lines employed in scribing thewafer into respective solid-state image pick-up devices, scribinggrooves (not shown) are previously formed by the technique such asetching (although only one unit is illustrated, actually, a large numberof solid-state image pick-up devices are successively formed). Further,by the ordinary silicon process, a device region inclusive of a channelstopper region, a channel region, charge transfer electrode is formed.By surface active normal temperature bonding, a reinforcement plate 701which is a silicon substrate with a silicon oxide film formed thereon isbonded on the rear surface of the solid-state image pick-up device board100 (FIG. 9(a)).

Thereafter, as seen from FIG. 9(b), alignment is made using an alignmentmark formed on the peripheral edge of each wafer. Further, on thesolid-state image pick-up device board 100 formed in the mannerdescribed above, a cover glass 200, which is composed of a plate-likeglass substrate 201 and a spacer 203S bonded thereon, is placed. In thisstate, heating is done to unify the solid-state image pick-up deviceboard 100 and cover glass 200 through an adhesive layer 207. This stepis preferably performed in an atmosphere of inert gas such as nitrogengas.

From the rear surface of the reinforcement plate 701, through-holes Hare formed by photolithography. Within each of the through-holes H, asilicon oxide film 109 is formed by the CVD technique or thermaloxidation. Thereafter, anisotropic etching is carried out to leave thesilicon oxide 109 on only the side wall of the through-hole H.

As seen from FIG. 10(a), by the CVD technique using WF₆, a tungsten filmwhich serves as a conductor layer to be in contact with a bonding pad isformed within the through-hole H.

As seen from FIG. 10(b), on the surface of the reinforcement plate 701,a bump 114 as well as the bonding pad 113 is formed.

In this way, a signal extracting electrode terminal and an energizingelectrode terminal can be formed on the reinforcement plate 701.

As seen from FIG. 10(c), an anisotropic conductive film 115 (ACP) isapplied onto the surface of the reinforcement plate 701.

Finally, as seen from FIG. 10(d), a circuit board 901 with a drivingcircuit formed thereon is connected to the reinforcement plate 701through the anisotropic conductive film 115. Incidentally, the circuitboard 901 has through-holes H each filled with a contact layer 117 of aconductive layer and a bonding pad 118 coupled therewith.

Through the bonding pads 118, a circuit board such as a printed boardcan be connected to the contact layers 117. The contact layer 117 isaligned with the conductor layer 108 formed on the solid-state imagepick-up device so that they are arranged on the same line.

Thereafter, the entire device is diced along dicing lines DC inclusiveof the contact layer 117 and the conductor layer 108 arranged on thesame line into individual image pick-up devices (although only one unitis illustrated, actually, plural solid-state image pick-up devices aresuccessively formed on the single wafer.

In this way, the solid-state image pick-up device can be manufacturedvery easily and with good workability.

Incidentally, the reinforcement plate 701, which is a silicon substratewith a silicon oxide film containing a light shading material, permitsheat insulation or electric insulation from the solid-state imagepick-up device board 100.

In this embodiment, although the through-hole H is filled with aconductor layer by the CVD technique, it may be also filled with theconductor layer so as to have a high aspect ratio with improvedworkability by plating, vacuum screen printing or vacuum adsorption.Further, in this embodiment, using the through-holes, electricconnection is made from the front and rear surfaces of the circuit boardon which the solid-state image pick-up device board and peripheralcircuit are mounted. However, the electric connection should not belimited to such a technique, but can be made by the technique of makingelectric contacts by diffusing impurities from the front and rearsurfaces.

In this way, the signal extracting electrode terminal and the energizingelectrode terminal can be formed on the side of the reinforcement plate701.

Further, alignment or electric connection such as wire bonding is notmade for each image pick-up device, but the entire wafer is packaged andthereafter diced into individual image pick-up devices. For this reason,the image pick-up devices can be easily manufactured and easily handled.

Further, the groove 204 is previously made in the glass substrate 201,and after packaging, the glass substrate 201 is diced by the techniqueof CMP (chemical mechanical polishing) to the depth reaching the glasssubstrate from the front surface. Therefore, the glass substrate can beeasily diced.

With a device forming plane sealed within the gap C by bonding, theindividual solid-state image pick-up device can be manufactured by onlydicing or gliding so that a reliable solid-state image pick-up devicewhile suffering from less damage.

Since the silicon substrate is reduced in thickness to ½ by thetechnique of CMP, the image pick-up device can be downsized andlow-profiled. Further, the silicon substrate, after bonded to the glasssubstrate, is low-profiled so that its mechanical strength can beprevented from being reduced.

In accordance with this invention, the wafer is subjected to positioningand unified with other members by collective packaging and separatedinto individual solid-state image pick-up devices. For this reason, thesolid-state image pick-up devices with high reliability can be easilymanufactured.

In this embodiment, the solid-state image pick-up devices can bemanufactured through the collective connection and dicing by thetechnique of CSP. However, the solid-state image pick-up devicesubstrate 100 with the through-holes H and bumps is diced intoindividual device units and the sealing cover glass 200 may be fixed toeach device.

The micro-lens array can be manufactured in such a manner that with atransparent resin film formed on a substrate surface, ion migration ismade from the surface to form a lens layer having a gradient ofrefraction index at a prescribed depth.

The material of the spacer can be selected suitably. For example, glass,polycarbonate, etc. may be employed in place of the silicon substrate.

Further, where the entire reinforcement plate 701 is made of alight-shading material, the reflection light from the rear surface canbe completely suppressed. The influence on the output of the solid-stateimage pick-up device, being caused by the light reflected from the rearsurface, can be also suppressed by forming the unevenness on the rearsurface of the solid-state image pick-up device, such as by grinding therear surface thereof. The light-shading film such as a tungsten filmformed on the rear surface of the solid-state image pick-up devicethrough the oxide film may be employed as a supporting member.

Further, a multi-layer film may be formed on the rear surface of thesolid-state image pick-up device. This also suppresses the influence ofthe light reflected from the rear surface on the output of thesolid-state image pick-up device.

In addition, light shading resin such as epoxy resin may be applied tothe rear surface of the solid-state image pick-up device.

Preferably, the supporting member includes a shielding plate so that thenoise due to undesired radiation can be suppressed.

Preferably, the semiconductor substrate is bonded to the peripheralcircuit substrate through a magnetic shielding plate so that thesolid-state image pick-up device board can be prevented from sufferingfrom the noise due to undesired radiation from the peripheral circuitsubstrate, and vice verse.

In the above seventh embodiment, the bonding between the solid-stateimage pick-up device and the sealing cover glass was made by using theadhesive layer. The bonding should not be limited to such a method, butcan be made also by the techniques of direct bonding/surface activationnormal temperature bonding, and pouring mold resin.

Where the solid-state image pick-up device and the sealing cover glassare bonded using the adhesive layer, a concave portion (liquidreservoir) is preferably formed in the bonding area to prevent themolten adhesive layer from flowing out.

This invention should not be applied to only the solid-state imagepick-up device explained in the embodiments described hitherto, but canbe applied to the other semiconductor devices including a photoelectricconversion device such as an optical sensor.

As understood from the description hitherto made, in accordance withthis invention, a solid-state image pick-up device can be provided whichis compact, generates less malfunction and provide high reliability.

In accordance with the method by this method, positioning is made in thelevel of a wafer; the solid-state image pick-up device board, supportingmember and translucent member are collectively packaged to be unified,and thereafter, and the solid-state image pick-up device is separatedinto individual solid-state devices. Thus, the image pick-up device canbe easily manufactured and positioned with high precision.

1. A method for manufacturing a semiconductor device comprising thesteps of: a forming step for forming a plurality of semiconductordevices on the front surface of a semiconductor substrate; a bondingstep for bonding a wiring board on the rear surface of saidsemiconductor substrate; a separating step for separating a bondingstructure, obtained by bonding, into semiconductor devices; and agrinding step for forming a rough surface on the rear surface of thesemiconductor substrate to reflect light away from the rear surface. 2.A method for manufacturing a semiconductor device comprising the stepsof: a forming step for forming a plurality of semiconductor devices onthe front surface of a semiconductor substrate; a bonding step forbonding a wiring board on the rear surface of said semiconductorsubstrate using light-shading adhesive provided between the wiring boardand the semiconductor substrate and the light-shading adhesivesuppressing light reflected from the rear surface of the semiconductorsubstrate from reaching the semiconductor device; and a separating stepfor separating a bonding structure obtained by bonding, into saidsemiconductor devices.